Materials Fundamentals of Gate Dielectrics

Materials Fundamentals of Gate Dielectrics

English | 14 July 2005 | ISBN: 1402030770 | 477 Pages | PDF | 14 MB

According to Bernie Meyerson, IBM's chief technology of?cer, the traditional sc- ing of semiconductor manufacturing processes died somewhere between the 1- and 90-nanometer nodes. One of the prime reasons is the low dielectric constant of SiO - thechoice dielectricof all modern electronics.

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