Mid-infrared Semiconductor Optoelectronics

Mid-infrared Semiconductor Optoelectronics
Springer; 1 edition | May 23, 2006 | ISBN-10: 184628208X | 751 pages | File type: PDF | 5.5 mb

The mid-infrared (2-10µm) spectral region is of enormous scientific and technological interest because it contains the strongest fingerprint absorption bands of a number of pollutant and toxic gases which require monitoring in a variety of different situations (e.g., oil-rigs, coal mines, landfill sites and car exhausts) and in concentrations, ranging from parts per billion to almost 100%. Organic liquids, narcotics and many biological and bio-medical analytes also have fingerprint absorptions in this spectral range. In addition, the atmospheric transmission window between 3 µm and 5 µm enables free-space optical communications, thermal imaging and the development of infrared counter-measures for "homeland security". However, many of these applications require technology based on un-cooled, efficient, inexpensive sources and detectors which are not yet available and so wide exploitation of this spectral range has yet to take place. There is no doubt that the practical realisation of mid-infrared semiconductor lasers, LEDs and detectors which can operate at room temperature will transform them from a specialist research curiosity to a pervasive technology that will unlock a wide variety of applications. Many of the necessary developments depend on the ability to fabricate suitable high-quality epitaxial materials through the use of strained-layer engineering at the nanoscale and to manipulate the optoelectronic properties of the corresponding quantum device structures.

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