Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications



2014 | ISBN-10: 9400776624 | 200 pages | PDF | 10 MB

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes.

Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.

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